IndiumV3, Main, Repository, bibRecord, 000D18

Fabrication and characteristics of BaTi0.85Sn0.15O3 thin films on tin doped indium oxide/glass substrate

Identifieur interne : 000D18 ( Main/Repository ); précédent : 000D17; suivant : 000D19

Fabrication and characteristics of BaTi0.85Sn0.15O3 thin films on tin doped indium oxide/glass substrate

Auteurs : RBID : Pascal:13-0161887

Descripteurs français

Pascal (Inist)
- Couche mince, Addition étain, Addition indium, Microstructure, Propriété physique, Epaisseur couche, Dépôt physique phase vapeur, Verre, Constante diélectrique, Cristallinité, Diffusion(transport), Electrode ITO, Spectrométrie SIMS, Profil profondeur, Oxyde d'étain, Oxyde d'indium, Matériau transparent, Courant fuite, Densité courant, Pulvérisation irradiation, Substrat indium, Substrat verre, Substrat InSnO, 6855J, 8115C, 6835F, 6855L.
Wicri :
- concept : Verre.

English descriptors

KwdEn :
- Crystallinity, Current density, Depth profiles, Diffusion, Glass, Indium additions, Indium oxide, Indium tin oxide electrode, Layer thickness, Leakage currents, Microstructure, Permittivity, Physical properties, Physical vapor deposition, Secondary ion mass spectrometry, Sputtering, Thin films, Tin additions, Tin oxide, Transparent material.

Abstract

This paper reports the correlation between the microstructure and the physical properties of transparent BaTi_0.85Sn_0.15O₃ (BTS) thin films with thicknesses of 90-360 nm by radio frequency magnetron sputtering on the tin doped indium oxide (ITO)/glass substrate. All of the BTS/ITO/glass samples have relatively high optical transparency with over 75% in the visible light region. The dielectric constant and tunability of BTS films increase with thickness due to comparatively better crystallinity. The thicker BTS film is observed in an inter-diffusion between BTS film and ITO electrode from the result of secondary ion mass spectrometry depth profiling and then shown in a higher leakage current density.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 000E91

Links to Exploration step

Pascal:13-0161887

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Fabrication and characteristics of BaTi<sub>0.85</sub>
Sn<sub>0.15</sub>
O<sub>3 </sub>
thin films on tin doped indium oxide/glass substrate</title>
<author><name>GUISHENG ZHU</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Chemistry and Materials Science, Shaanxi Normal University</s1>
<s2>Xian 710062</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Xian 710062</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology</s1>
<s2>Guilin 541004</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Guilin 541004</wicri:noRegion>
</affiliation>
</author>
<author><name>HUARUI XU</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology</s1>
<s2>Guilin 541004</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Guilin 541004</wicri:noRegion>
</affiliation>
</author>
<author><name>ZUPEI YANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Chemistry and Materials Science, Shaanxi Normal University</s1>
<s2>Xian 710062</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Xian 710062</wicri:noRegion>
</affiliation>
</author>
<author><name>AIBING YU</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>School of Materials Science and Engineering, University of New South Wales</s1>
<s2>Sydney, NSW 2052</s2>
<s3>AUS</s3>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Australie</country>
<wicri:noRegion>Sydney, NSW 2052</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">13-0161887</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0161887 INIST</idno>
<idno type="RBID">Pascal:13-0161887</idno>
<idno type="wicri:Area/Main/Corpus">000E91</idno>
<idno type="wicri:Area/Main/Repository">000D18</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0040-6090</idno>
<title level="j" type="abbreviated">Thin solid films</title>
<title level="j" type="main">Thin solid films</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Crystallinity</term>
<term>Current density</term>
<term>Depth profiles</term>
<term>Diffusion</term>
<term>Glass</term>
<term>Indium additions</term>
<term>Indium oxide</term>
<term>Indium tin oxide electrode</term>
<term>Layer thickness</term>
<term>Leakage currents</term>
<term>Microstructure</term>
<term>Permittivity</term>
<term>Physical properties</term>
<term>Physical vapor deposition</term>
<term>Secondary ion mass spectrometry</term>
<term>Sputtering</term>
<term>Thin films</term>
<term>Tin additions</term>
<term>Tin oxide</term>
<term>Transparent material</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Couche mince</term>
<term>Addition étain</term>
<term>Addition indium</term>
<term>Microstructure</term>
<term>Propriété physique</term>
<term>Epaisseur couche</term>
<term>Dépôt physique phase vapeur</term>
<term>Verre</term>
<term>Constante diélectrique</term>
<term>Cristallinité</term>
<term>Diffusion(transport)</term>
<term>Electrode ITO</term>
<term>Spectrométrie SIMS</term>
<term>Profil profondeur</term>
<term>Oxyde d'étain</term>
<term>Oxyde d'indium</term>
<term>Matériau transparent</term>
<term>Courant fuite</term>
<term>Densité courant</term>
<term>Pulvérisation irradiation</term>
<term>Substrat indium</term>
<term>Substrat verre</term>
<term>Substrat InSnO</term>
<term>6855J</term>
<term>8115C</term>
<term>6835F</term>
<term>6855L</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Verre</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">This paper reports the correlation between the microstructure and the physical properties of transparent BaTi<sub>0.85</sub>
Sn<sub>0.15</sub>
O<sub>3</sub>
 (BTS) thin films with thicknesses of 90-360 nm by radio frequency magnetron sputtering on the tin doped indium oxide (ITO)/glass substrate. All of the BTS/ITO/glass samples have relatively high optical transparency with over 75% in the visible light region. The dielectric constant and tunability of BTS films increase with thickness due to comparatively better crystallinity. The thicker BTS film is observed in an inter-diffusion between BTS film and ITO electrode from the result of secondary ion mass spectrometry depth profiling and then shown in a higher leakage current density.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0>
</fA01>
<fA02 i1="01"><s0>THSFAP</s0>
</fA02>
<fA03 i2="1"><s0>Thin solid films</s0>
</fA03>
<fA05><s2>531</s2>
</fA05>
<fA08 i1="01" i2="1" l="ENG"><s1>Fabrication and characteristics of BaTi<sub>0.85</sub>
Sn<sub>0.15</sub>
O<sub>3 </sub>
thin films on tin doped indium oxide/glass substrate</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>GUISHENG ZHU</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>HUARUI XU</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>ZUPEI YANG</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>AIBING YU</s1>
</fA11>
<fA14 i1="01"><s1>School of Chemistry and Materials Science, Shaanxi Normal University</s1>
<s2>Xian 710062</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology</s1>
<s2>Guilin 541004</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>School of Materials Science and Engineering, University of New South Wales</s1>
<s2>Sydney, NSW 2052</s2>
<s3>AUS</s3>
<sZ>4 aut.</sZ>
</fA14>
<fA20><s1>415-418</s1>
</fA20>
<fA21><s1>2013</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>13597</s2>
<s5>354000500618870630</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2013 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>11 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>13-0161887</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Thin solid films</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>This paper reports the correlation between the microstructure and the physical properties of transparent BaTi<sub>0.85</sub>
Sn<sub>0.15</sub>
O<sub>3</sub>
 (BTS) thin films with thicknesses of 90-360 nm by radio frequency magnetron sputtering on the tin doped indium oxide (ITO)/glass substrate. All of the BTS/ITO/glass samples have relatively high optical transparency with over 75% in the visible light region. The dielectric constant and tunability of BTS films increase with thickness due to comparatively better crystallinity. The thicker BTS film is observed in an inter-diffusion between BTS film and ITO electrode from the result of secondary ion mass spectrometry depth profiling and then shown in a higher leakage current density.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B60H55J</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B80A15C</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B60H35F</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B60H55L</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Couche mince</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Thin films</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Addition étain</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Tin additions</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Addition indium</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Indium additions</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Microstructure</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Microstructure</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Propriété physique</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Physical properties</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Epaisseur couche</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Layer thickness</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Espesor capa</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Dépôt physique phase vapeur</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Physical vapor deposition</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Verre</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Glass</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Constante diélectrique</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Permittivity</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Cristallinité</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Crystallinity</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Cristalinidad</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Diffusion(transport)</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Diffusion</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Electrode ITO</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Indium tin oxide electrode</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Electrodo ITO</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Spectrométrie SIMS</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Secondary ion mass spectrometry</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Espectrometría SIMS</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Profil profondeur</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Depth profiles</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Oxyde d'étain</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Tin oxide</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Estaño óxido</s0>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Oxyde d'indium</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Indium oxide</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Indio óxido</s0>
<s5>16</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Matériau transparent</s0>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Transparent material</s0>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Material transparente</s0>
<s5>17</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Courant fuite</s0>
<s5>29</s5>
</fC03>
<fC03 i1="18" i2="3" l="ENG"><s0>Leakage currents</s0>
<s5>29</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Densité courant</s0>
<s5>30</s5>
</fC03>
<fC03 i1="19" i2="3" l="ENG"><s0>Current density</s0>
<s5>30</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>Pulvérisation irradiation</s0>
<s5>31</s5>
</fC03>
<fC03 i1="20" i2="3" l="ENG"><s0>Sputtering</s0>
<s5>31</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>Substrat indium</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>Substrat verre</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>Substrat InSnO</s0>
<s4>INC</s4>
<s5>48</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>6855J</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="25" i2="3" l="FRE"><s0>8115C</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="26" i2="3" l="FRE"><s0>6835F</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="27" i2="3" l="FRE"><s0>6855L</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>140</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Main/Repository

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000D18 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 000D18 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    RBID
   |clé=     Pascal:13-0161887
   |texte=   Fabrication and characteristics of BaTi0.85Sn0.15O3 thin films on tin doped indium oxide/glass substrate
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

Fabrication and characteristics of BaTi0.85Sn0.15O3 thin films on tin doped indium oxide/glass substrate

Fabrication and characteristics of BaTi0.85Sn0.15O3 thin films on tin doped indium oxide/glass substrate

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri